• <source id="ok4mi"></source>
    <u id="ok4mi"><noscript id="ok4mi"></noscript></u>
  • <s id="ok4mi"><center id="ok4mi"></center></s>
     
    Home > Product Lines > Solar-cell paste
    - Designed for crystalline silicon wafer
    - Applicable to Standard emitter, Shallow emitter, LDE cell
    - Low contact resistance
    - Fine line resolution and excellent printability
    - Good adhesion to diverse ribbon type
    - Wide range of firing process tolerance
     
    Fired Ag electrode (dense microstructure and good appearance of fired Ag cross section)
      Top Cross Section
    Image
    Fine pattern printability
      34? pattern 44? pattern   50? pattern
    Image
    Aspect 0.33 0.28 0.28
    Width[?] 40 50 58
    Thickness[?] 13 14 16
    Screen #360_16? #400_18? #400_18?
    Pattern 34um 96EA 44um 90EA 50um 88EA
     
    Forming exellent contact on solar cell of a broad of sheet resistances
      75Ω/sq. 85Ω/sq. 105Ω/sq.
    Rcontact
    [mΩ?cm2]
    6 6.5 7.5
    Electrical
    performances
    Specification
    Model DPS-1900L series DPS-1900V series
    Type Standard type LDE type
    Solid content rate [%] 91±1.0 91±1.0
    Viscosity 360±20kcps
    Brookfield HBT,
    10rpm SC4-14/6R, 25℃)
    Consumption [mg/pcs] 90-130 90-130
    Validity[months] 6 6
     
    - Rear Ag paste designed for crystalline silicon wafer
    - Retaining diverse silver content rate according to requirements
    - Retaining environment-friendly Pb free product lines
    - Retaining product lines for PERC type
    - Low contact resistance, Good adhesion, Good solderability
     
    Fine pattern after firing
    Top Cross Section
    Image
     
    Image of Rear electrode for PERC type(Not damaging on passivation layer)
     
    Specification
    Model DPS-0020 series DPS-0022 series
    Type Standard type PERC type
    Solid content rate [%] 42 45 50 55 40 45 55
    Inorganic
    content rate [%]
    45.0±1.0 48.0±1.0 54.0±1.0 58.5±1.5 43.0±1.0 48.0±1.0 58.5±1.5
    Viscosity 75±10kcps
    Brookfield HBT,
    10rpm SC4-14/6R, 25℃)
    75±10kcps
    Brookfield HBT,
    10rpm SC4-14/6R, 25℃)
    Consumption [mg/?] 4.0-4.5 4.5-5.0 5.0-5.5 5.5-6.0 3.8-4.3 4.5-5.0 5.5-6.0
    Validity[months] 6 6
     
    - Al paste designed for crystalline silicon wafer
    - Retaining product lines for Pb contained & Pb free
    - High Voc let it have improved efficiency
    - Uniform and thick BSF forming
    - Excellent physical properties (BOW / EVA PEEL FORCE / HOT WATER TEST)
     
    Electrical properties
    Model DPA-3170G DPA-3170P
    Voc scan
    Voc 637mV 639mV
    Eff. 19.07% 19.13%
    FF 79.91% 79.97%
     
    Fine structure after firing
    Model DPA-3170G DPA-3170P
    electrode thickness
    BSF layer
    Physical properties showing high reliabilities
      Bow [mm] Bump EVA Peel test (Adhesion) Hot DI water test
    (70±2℃)
    DPA-3170G 1.5 pass 25N 10? ??
    DPA-3170P 1.6 pass 30N 10? ??
    Specification
    Model DPA-3170G DPA-3170P
    Type Pb-free Pb contained
    Inorganic
    content rate [%]
    76.5±2.0 78.5±2.0
    T.I (1/10rpm) 5.5-6.5 5.0-6.0
    Viscosity 65±10kcps Brookfield HBT, 10rpm SC4-14/6R, 25℃)
    Consumption [g/pcs] 1.3-1.5 1.3-1.5
    Validity[months] 6 6
    天天德州手机版